Exchange Bias Effect Determined by Anisotropic Magnetoresistance in CoxNi1-xO/Ni0.8Fe0.2 Bilayer System

  • Yoo, Woosuk
  • Choo, Seongmin
  • Lee, Kyujoon
  • Jo, Sinyong
  • You, Chun-Yeol
  • ... Jung, Myung-Hwa
  • 외 1명
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초록

We prepared bilayer systems composed of the ferromagnetic (FM) layer Ni0.8Fe0.2 and the anti-FM (AFM) layer CoxNi1-xO (x = 0.3, 0.4, 0.5, and 0.6) using the dc/RF magnetron sputtering methods. Coercive field H-C and exchange bias field H-E, the shift field in hysteresis loop, were observed in all the Ni0.8Fe0.2/CoxNi1-xO bilayer systems after field cooling. The changes of H-C and H-E were explicitly studied for various parameters, such as the composition of AFM material x, the measured temperature T, and the direction of applied magnetic field. Measured anisotropic magnetoresistance (AMR) was analyzed to extract the H-C and H-E, since the peaks (maximum or minimum) in AMR do not appear exactly at the coercive field H-C of the magnetic hysteresis measurement. We propose a new approach for the analysis of AMR to determine HC and HEB along the field angle. with respect to the field-cooling direction. The results were compared with the variations of HEB and H-C reported earlier.

키워드

Anisotropic magnetoresistance (AMR)exchange biasmagnetic anisotropymagnetic filmsSPIN-VALVES
제목
Exchange Bias Effect Determined by Anisotropic Magnetoresistance in CoxNi1-xO/Ni0.8Fe0.2 Bilayer System
저자
Yoo, WoosukChoo, SeongminLee, KyujoonJo, SinyongYou, Chun-YeolHong, Jung-IlJung, Myung-Hwa
DOI
10.1109/TMAG.2015.2435738
발행일
2015-11
유형
Article; Proceedings Paper
저널명
IEEE Transactions on Magnetics
51
11