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Studies on the Characteristics and Durability of a Vertical Type Organic Transistor Using Indenofluorenedione Derivatives as an N-Type Active Material
- Lee, Tae Yeon;
- Jung, Dae Young;
- Park, Jong Wook;
- Cho, Jeong Ho;
- Oh, Se Young
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0초록
We have fabricated a vertical type organic field effect transistor (OFET) using indenofluorenedione derivatives (IF-dione-F) as an n-type organic active material and dimethyldicyanoquinonediimine (DMDCNQI) as an n-type buffer layer. The configuration of the vertical type OFET was ITO (drain)/IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of the vertical type OFET were investigated from the measurements of current-voltage characteristics, contact resistance and device durability. In particular, the device consisting of ITO/TriF-IF-dione/LiAl/TriF-IF-dione/DMDCNQI/LiAl showed a low turn-on voltage and a high on/off ratio of 6.0x10(3).
키워드
Vertical Type Organic Transistor; IF-Dione-F; On-Off Ratio; DMDCNQI; N-Type Organic Semiconductor; Contact Resistance; Device Durability; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); FABRICATION; PENTACENE; CHANNEL; SEMICONDUCTORS
- 제목
- Studies on the Characteristics and Durability of a Vertical Type Organic Transistor Using Indenofluorenedione Derivatives as an N-Type Active Material
- 저자
- Lee, Tae Yeon; Jung, Dae Young; Park, Jong Wook; Cho, Jeong Ho; Oh, Se Young
- 발행일
- 2013-12
- 유형
- Article
- 권
- 13
- 호
- 12
- 페이지
- 8016 ~ 8019
- 언어
- ENG
- 출판사
- American Scientific Publishers
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1533-4899
P 1533-4880