D-band Power Amplifier Module with Medium Output Power Using E-plane Waveguide Transition

초록

This paper presents a D-band (110-170 GHz) power amplifier (PA) module using E-plane probe waveguide-to-microstrip transitions. The PA IC in a 250 nm InP HBT process is mounted in the waveguide and bond-wired to the transition substrate. The parasitic effect of bond-wires are simulated and compensated by designing the external matching circuits in a transition substrate. External bias circuits are also designed considering the stability of the PA IC. The fabricated PA module exhibits a small-signal gain of 24.6 dB and output power of 12.9 dBm at 130 GHz. It exhibits a measured output power larger than 11.1 dBm from 120 to 140 GHz.

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