상세 보기
Temperature-controlled synthesis of In2Ge2O7 nanowires and their photoluminescence properties
- Kim, Sang Sub;
- Park, Jae Young;
- Kim, Hyo Sung;
- Na, Han Gil;
- Yang, Ju Chan;
- ... Cheong, Hyeonsik;
- 외 5명
Citations
WEB OF SCIENCE
10Citations
SCOPUS
12초록
By controlling the heating temperature of a mixture of In and Ge powders, we have obtained monoclinic In2Ge2O7 nanowires at 600-700 degrees C, whereas we have produced cubic In2O3 nanowires at 900 degrees C. The In2Ge2O7 nanowires grown at 600 degrees C were terminated by Au-containing nanoparticles, giving evidence that the vapour-liquid-solid model is the major growth mechanism. With the growth process at 700-900 degrees C being dominated by a vapour-solid process, we have discussed the temperature-induced change in growth mechanisms. Photoluminescence measurements at 10-300K revealed a broad visible emission centred at around 2.5 eV.
키워드
THERMAL EVAPORATION; SILICON NANOWIRES; GERMANATE; NANOSTRUCTURES; GROWTH; NANOBELTS; CHEMISTRY; PHYSICS; OXIDES; PORES
- 제목
- Temperature-controlled synthesis of In2Ge2O7 nanowires and their photoluminescence properties
- 저자
- Kim, Sang Sub; Park, Jae Young; Kim, Hyo Sung; Na, Han Gil; Yang, Ju Chan; Shim, Seung Hyun; Lee, Chongmu; Park, Doyoung; Nam, Dahyun; Cheong, Hyeonsik; Kim, Hyoun Woo
- 발행일
- 2011-01-19
- 유형
- Article
- 권
- 44
- 호
- 2