Resonant Raman study on the nitrogen-induced electronic states in GaAs1-xNx

초록

Nitrogen-induced electronic states, encompassing E-0 through E+, in GaAs1-xNx (0.2 % less than or equal to x less than or equal to 1.3 %) have been probed using resonant Raman scattering. We have observed strong Raman intensity resonance enhancement for the L and X zone boundary phonons as well as the zone center F phonons for excitations near the E+ transition, which provides unambiguous evidence of significant L and X components in the wave function of the nitrogen-induced E+ state in GaAs1-xNx. The resonant Raman scattering profile for the asymmetric line-width broadening of the LO phonon exhibits two distinct maxima attributed to states arising from a splitting of the quadruply degenerate conduction band near the L-point.

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