A 130-GHz High-Power Fundamental Oscillator in 28-nm CMOS Technology

초록

This article presents a high power fixed-frequency oscillator operating D-band (110-170 GHz) implemented with $28-\mathrm{nm}$ CMOS technology. To achieve high output power, a fundamental-frequency oscillator topology was adopted. Based on a common-source (CS) amplifier configuration, the optimal oscillation frequency ($f_{\text{osc }}$) was determined through small-signal analysis at the gate and source terminals, while the optimum output condition was derived from large-signal load-pull simulations at the drain terminal. The overall design was carried out by combining these analyses. © 2026 IEEE.

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