Thickness dependence of antiferromagnetic phase transition in Heisenberg-type MnPS3

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초록

The behavior of 2-dimensional (2D) van der Waals (vdW) layered magnetic materials in the 2D limit of the few layer thickness is an important fundamental issue for the understanding of the magnetic ordering in lower dimensions. The antiferromagnetic transition temperature T-N of the Heisenberg-type 2D magnetic vdW material MnPS3 was estimated as a function of the number of layers. The antiferromagnetic transition was identified by temperature-dependent Raman spectroscopy, from the broadening of a phonon peak at 155 cm(-1), accompanied by an abrupt redshift and an increase of its spectral weight. TN is found to decrease only slightly from-78 K for bulk to-66 K for 3L. The small reduction of TN in thin MnPS3 approaching the 2D limit implies that the interlayer vdW interaction is playing an important role in stabilizing magnetic ordering in layered magnetic materials.

키워드

AntiferromagnetismMagnetic orderingIsotropic Heisenberg modelManganese phosphorus trisulfideRaman spectroscopy
제목
Thickness dependence of antiferromagnetic phase transition in Heisenberg-type MnPS3
저자
Lim, Soo YeonKim, KangwonLee, SungminPark, Je-GeunCheong, Hyeonsik
DOI
10.1016/j.cap.2020.09.017
발행일
2021-01
유형
Article
저널명
Current Applied Physics
21
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