Enhanced Photoluminescence in ZnO Nanorods

Lee, G. J.; Lim, H. -H.; Cha, M.; Cheong, H.; Han, S. -H.; Lee, Y. -P.

doi:10.1063/1.3666476

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Enhanced Photoluminescence in ZnO Nanorods

Lee, G. J.;
Lim, H. -H.;
Cha, M.;
Cheong, H.;
Han, S. -H.;
외 1명

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초록

We investigated the structures, photoluminescence (PL), and lasing characteristics of ZnO nanorods prepared by chemical bath deposition. The PL spectra under picosecond-laser-pulse excitation exhibited a spectrally narrowed emission band with a peak at 3.20 eV and a spectral width of 35 meV. The lasing phenomena are ascribed to the amplified spontaneous emission (ASE) by coupling of the microcavity effect of ZnO nanorods and high intensity excitation. Above the lasing threshold, the ASE peak intensity exhibited a superlinear dependence on the excitation intensity. In this research, ZnO nanorods were grown on the seed layers by chemical bath deposition in an aqueous solution of Zn(NO3)(2) and hexamethyltetramine. The scanning-electron microscopy clearly reveals that ZnO nanorods were successfully grown on the seed layers.

키워드

Vertically aligned ZnO nanorods; Photoluminescence; Lasing; Chemical bath deposition

제목: Enhanced Photoluminescence in ZnO Nanorods

저자: Lee, G. J.; Lim, H. -H.; Cha, M.; Cheong, H.; Han, S. -H.; Lee, Y. -P.

DOI: 10.1063/1.3666476

발행일: 2011

유형: Proceedings Paper

저널명: AIP Conference Proceedings

권: 1399