Noncontact Characterization of Electric Carriers Density at Heterojunction Interfaces

초록

A near-field scanning microwave microprobe (NSMM) technique has been used to investigate the conductivity change in heterojunction interface of solar cells by measuring the reflection coefficient S-11 at an operating frequency near 4.1 GHz. As the density of carrier in n-type silicon layer of solar cells varied due to the incident light intensity was changed. A theoretical model was developed for the reflection coefficient S-11, caused by the incident light intensity which can be derived by using standard transmission line theory. We directly imaged the photoconductivity changes due to the change of the carrier's properties with the different incident light intensities and wavelengths by NSMM.

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