A Gm-Boosted 3-Stage Amplifier with Gain-Enhancing Feedforward Path for CL of 40-160nF

초록

This paper proposes a 3-stage amplifier designed to drive a load capacitor (C<inf>L</inf>) exceeding 100 nF. To ensure stability with a large C<inf>L</inf> while achieving high DC gain and sufficient gainbandwidth (GBW), this amplifier uses a transconductance (G<inf>m</inf>) boosting cell and a gain-enhancing feedforward path (GE-FFP). As a result, the amplifier achieves DC gain >130 dB, GBW of 1.47 MHz, and phase margin (PM) of 51° when driving C<inf>L</inf> of 160 nF. The chip was fabricated in a 28 nm CMOS process. © 2025 JSAP.