Enhanced Performance of Solution-Processed TESPE-ADT Thin-Film Transistors

초록

A solution-processed anthradithiophene derivative, 5,11-bis(4-triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as approximate to 0.12 cm(2)V(-1)s(-1) are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.

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