Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells

초록

We grew In-rich InGaN/GaN multiple quantum wells (MQWs) using growth interruption (GI) by metalorganic chemical vapor deposition. The quality of overgrown InGaN/GaN QW layers in MQWs was largely affected by the crystalline quality and interfacial abruptness of the underlying QW layer. Introduction of 10 s GI was very effective in improving the crystalline quality and interfacial abruptness of InGaN QW layers, and we grew a ten periods of 1-nm-thick In-rich InGaN/GaN MQW with 10 s GI and obtained a strong near-ultraviolet (UV) emission (similar to 390 nm) at room temperature. We believe that use of less than 1-nm-thick In-rich InGaN MQW can be a candidate for near-UV source, which might replace the conventional low-indium content (< 10%), thicker InGaN QW layer. (c) 2005 American Institute of Physics.

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