Performance of pentacene-based thin-film transistors fabricated at different deposition rates

초록

We studied the electrical properties of organic thin-film transistors (OTFTs) fabricated at different deposition rates by measuring the field-effect mobility and the threshold voltages. As the active layer, pentacene thin film with a thickness of 50 nm was deposited at a rate of 0.05 Å/s to 1.14 Å/s. The thickness of the drain-source gold electrode was 50 nm. The mobility was 1.9 × 10− 1 cm2/V·s at a deposition rate of 0.05 Å/s, the mobility increased to 5.2 × 10− 1 cm2/V·s when the deposition rate was increased to 0.4 Å/s, and then the mobility decreased to 6.5 × 10− 2 cm2/V·s when the deposition rate decreased to 1.14 Å/s. Thus, the mobility of pentacene OTFTs was observed to depend on the thermal deposition rate. © 2018 The Korean Physical Society. All rights reserved.

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