Characteristics and Fabrication of an Inverted Organic Photodiode Using CdSe Core/ZnS Shell Quantum Dots As an Electron Transport Material

초록

To achieve high detectivity of organic photodetectors (OPDs), we incorporated CdSe core/ZnS shell quantum dots (CdSe@ZnS) in devices consisting of ITO/tin oxide (SnO2)/CdSe@ZnS/(poly(3-hexylthiophene-2,5-diyl)[P3HT]:PC60BM)/MoO3/Ag. We found that the CdSe@ZnS layer has a significant role in enhancing photocurrent and reducing leakage current simultaneously by transferring energy from the quantum dot buffer layer to the wide band gap of the ZnS shell. As a result, the device with the CdSe@ZnS quantum dot buffer layer shows enhancement of the photocurrent by 13.2%, reduction in the dark current from 8.28 mu A/cm(2) to 1.06 mu A/cm(2), and detectivity of 1.43 x 10(12) Jones.

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