고전압 Power IC 집적을 위한 4H-SiC CMOS 신뢰성 연구

초록

In this paper, we studied 4H-SiC CMOS that can be integrated with high-voltage SiC power devices. Afterdesigning the CMOS on a 4H-SiC substrate, we compared the electrical characteristics with the reliability of hightemperature operation by TCAD simulation. In particular, it was confirmed that changing HfO2 as the gatedielectric for reliable operation at high temperatures improves the thermal properties compared to SiO2. Byresearching SiC CMOS devices, we can integrate high-power SiC power devices with SiC CMOS for excellentperformance in terms of efficiency and cost of high-power systems.

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