Characteristics and fabrication of vertical type organic light emitting transistors using n-type organic materials

초록

We have fabricated vertical type organic thin film transistors (OTFTs) consisting of ITO/n type active material/Al gate/n type active material/Al using F16CuPc. NTCDA. PTCDA and PTCDI C-8. The effect of mobility of n type active materials and thin film thickness on current-voltage(I-V) characteristics and on/off ratios were investigated. The vertical type organic transistor using PTCDI C-8 exhibited low operation voltage and high on-off ratio. In addition, we have investigated the feasibility of application in organic light emitting transistor using light emitting polymer. Especially, the light emitting transistor consisting of ITO/PED0T-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al showed the maximum quantum efficiency of 0.054.

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