Characteristics of Inverted Organic Photodiodes Fabricated with YbF3 as an Electron Transport Layer

초록

An inverted organic photodiode (OPD) consisting of ITO/YbF3/P3HT: PCBM/MoO3/Ag was fabricated. Here, YbF3 was used as an n-type buffer layer to tune the work function of indium tin oxide (ITO). The prepared OPD exhibited high detectivity (2.11x10(12) Jones) and bandwidth (131 KHz) as a result of the high photocurrent and low dark current. In particular, the decrease in dark current was attributed to the hole blocking ability of the YbF3 buffer layer with a low work function.

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