상세 보기
A 60 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs
- Kim, Youngmin;
- Koh, Yumin;
- Kim, Jihoon;
- Lee, Seokchul;
- Jeong, Jinho;
- 외 2명
Citations
WEB OF SCIENCE
20Citations
SCOPUS
25초록
A V-band monolithic microwave integrated circuit power amplifier (PA) using metamorphic high electron mobility transistors (mHEMTs) is developed using a stacked-FET structure. Design methodology to optimize the series power combining power amplifiers at millimeter-waves is also presented. The fabricated PA using triple-stacked 130 nm mHEMTs shows a gain of 16 dB and a saturated output power of 20 dBm with a power added efficiency of 19% at 59 GHz. The 3 dB output power bandwidth is as wide as 15 GHz.
키워드
Metamorphic high electron mobility transistor (mHEMT); power amplifier (PA); FET; V-band
- 제목
- A 60 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs
- 저자
- Kim, Youngmin; Koh, Yumin; Kim, Jihoon; Lee, Seokchul; Jeong, Jinho; Seo, Kwangseok; Kwon, Youngwoo
- 발행일
- 2011-06
- 유형
- Article
- 권
- 21
- 호
- 6
- 페이지
- 323 ~ 325