Strain-induced Changes in the Electronic Structure of Graphene

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초록

We observed the splitting of the Raman 2D band of single layer graphene under uniaxial strain. As the strain increases, the peak position of the G band redshifts and the G band splits into two peaks, G(+) and G(-). We can identify the crystal orientation of the graphene sample with respect to the strain direction using polarization analysis of the G band. In addition, the 2D band also redshifts and splits into two peaks as strain is applied. Since the 2D band reflects the electronic band structure of graphene near the K points through the double resonant Raman scattering process, the strain-induced changes of the 2D band reflect changes in both the phonon frequencies and the electronic band structure.

키워드

GrapheneRaman spectroscopyStrainPhonon
제목
Strain-induced Changes in the Electronic Structure of Graphene
저자
Yoon, DuheeWoo, SeoungwooSon, Young-WooCheong, Hyeonsik
DOI
10.1063/1.3666593
발행일
2011
유형
Proceedings Paper
저널명
AIP Conference Proceedings
1399