A 1V 20.7μW Four-Stage Amplifier Capable of Driving a 4-to-12nF Capacitive Load with >1.07MHz GBW with an Improved Active Zero

  • Lee, Chan-Ho
  • Park, Hyo-Jin
  • Cho, Joo-Mi
  • Choi, Hyeon-Ji
  • Jeon, Young-Jun
  • 외 1명
Citations

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초록

This paper proposes a four-stage amplifier with a wider gain bandwidth (GBW) and less sensitivity to gain reduction caused by process scale down. To widen GBW, the proposed amplifier uses a passive zero in the main path and an improved active zero in the feed-forward path. The amplifier achieves DC gain >120dB, GBW of 1.25 MHz and 1.07 MHz, and 68.5° and 52°, at CL of 4 nF and 12 nF, respectively. The chip is implemented in a 0.18-μ m CMOS process. © 2023 JSAP.

제목
A 1V 20.7μW Four-Stage Amplifier Capable of Driving a 4-to-12nF Capacitive Load with >1.07MHz GBW with an Improved Active Zero
저자
Lee, Chan-HoPark, Hyo-JinCho, Joo-MiChoi, Hyeon-JiJeon, Young-JunHong, Sung-Wan
DOI
10.23919/VLSITechnologyandCir57934.2023.10185347
발행일
2023
유형
Conference Paper
저널명
Digest of Technical Papers - Symposium on VLSI Technology
2023-June