Fabrication of solution-processed organic field-effect transistor by structural engineering of naphtho[1,2-b:5,6-b']dithiophene derivatives

초록

In this study, three novel organic semiconductors based on naphthodithiophene (NDT) derivatives were synthesized to investigate the influence of side-chain structure and phase transition on their material properties and electronic performance. The synthesized compounds are 2-octyl-7-(thiophen-2-yl)naphtho[1,2-b:5,6-b ']dithiophene (compound 1), 2-octyl-7-(5-octylthiophen-2-yl)naphtho[1,2-b:5,6-b ']dithiophene (compound 2), and 2-(5(octan-3-yl)thiophen-2-yl)-7-octylnaphtho[1,2-b:5,6-b ']dithiophene (compound 3). To understand the effect of the different side chains, the optical, electrochemical, and thermal properties of the compounds were characterized, and their thin-film morphologies and phase transition behavior were analyzed. Solution-processed organic field-effect transistors (OFETs) were then fabricated using these materials as the active channel layer to evaluate the semiconducting performance. Among the three compounds, compound 1, which possesses the simplest side-chain structure, exhibited the highest carrier mobility of 0.024 cm2/(V & sdot;s). This result emphasizes the importance of side-chain engineering in molecular design, as the bulkier side chains on compounds 2 and 3 led to inferior semiconducting performance, likely due to increased steric hindrance that disrupts effective intermolecular packing.

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