Highly-integrable K-band power dividers based on digital CMOS technology

Citations

WEB OF SCIENCE

0
Citations

SCOPUS

0

초록

In this paper, we present two-way and four-way power dividers that operate in wideband over K-band. To maximize the integrability with other circuit blocks, the power dividers are designed in a purely digital CMOS technology without any RF back-end-of-line process. We discuss a design issue arising from the high loss of transmission lines in the digital process. A capacitor-loaded Wilkinson topology is adopted for a compact size. The proposed dividers are implemented in a 0.13-mu m digital CMOS process with automatic dummy metal fills. We also analyze the effect of the dummy fills on the power divider performance, showing good agreement with measured results.

키워드

power dividerdigital CMOS processWilkinson dividerdummy metal fills
제목
Highly-integrable K-band power dividers based on digital CMOS technology
저자
Park, SangguJeong, JinhoJeon, Sanggeun
DOI
10.1587/elex.8.114
발행일
2011-02-10
유형
Article
저널명
IEICE Electronics Express
8
3
페이지
114 ~ 120