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Highly-integrable K-band power dividers based on digital CMOS technology
- Park, Sanggu;
- Jeong, Jinho;
- Jeon, Sanggeun
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0초록
In this paper, we present two-way and four-way power dividers that operate in wideband over K-band. To maximize the integrability with other circuit blocks, the power dividers are designed in a purely digital CMOS technology without any RF back-end-of-line process. We discuss a design issue arising from the high loss of transmission lines in the digital process. A capacitor-loaded Wilkinson topology is adopted for a compact size. The proposed dividers are implemented in a 0.13-mu m digital CMOS process with automatic dummy metal fills. We also analyze the effect of the dummy fills on the power divider performance, showing good agreement with measured results.
키워드
power divider; digital CMOS process; Wilkinson divider; dummy metal fills
- 제목
- Highly-integrable K-band power dividers based on digital CMOS technology
- 저자
- Park, Sanggu; Jeong, Jinho; Jeon, Sanggeun
- 발행일
- 2011-02-10
- 유형
- Article
- 권
- 8
- 호
- 3
- 페이지
- 114 ~ 120