Solid cross linked-poly(ethylene oxide) electrolyte gate dielectrics for organic thin-film transistors

초록

Solid polymer electrolyte gate dielectric based on cross-linked poly(ethylene oxide) (CPEO) was developed and employed for organic thin-film transistors (OTFTs). Mechanical stability, high areal capacitance, and amorphous morphology of CPEO were achieved via the use of polyhedral oligomeric silsesquioxane (POSS) as cross-linker, dissolved ion [EMIM][TFSI] as electrolyte, and PEO with low molecular weight as polymer matrix, respectively. The resulting solid polymer electrolyte showed excellent insulating properties with low leakage current density (1.8 x 10(-7) A cm(-2) at 1 V) and high capacitance per area (similar to 1 mu F cm(-2) at 100 Hz). Furthermore, dielectric properties of the developed polymer electrolytes including ionic conductivity as well as segmental relaxation time were investigated. The polyelectrolyte dielectric was employed for bottom-gate/top-contact organic thin-film transistors and the resulting devices showed decent electrical performance with a carrier mobility of 0.12 (similar to 0.03) cm(2) V-1 s(-1) and a current on/off ratio of 10(3) at low operating voltage of 5 V. (C) 2020 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.

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