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초록
This article presents a capacitor-less low-dropout regulator (LDO) using a bandwidth boosting technique, which is based on a stable class B structure, and an improved buffer to achieve a fast transient response. In measurement, this LDO supplies a maximum load current of 300 mA at a dropout voltage of 200 mV and achieves the best normalized figures of merit of 1.52 ns center dot mV. The proposed LDO is implemented in a 0.5 mu m CMOS process and occupies an area of 0.130 mm(2).
키워드
Capacitor-less; fast transient response; low-dropout regulator (LDO); slew-rate (SR); LOW-DROPOUT REGULATOR
- 제목
- A 92 ns Settling-Time Fast-Transient Capacitor-Less LDO With a Stable Class B Bandwidth-Boosting Error Amplifier and an Improved Buffer for Mobile Applications
- 저자
- Lee, Chan-Kyu; Lee, Chan-Ho; Jeon, Young-Jun; Oh, Young-Ju; Lee, Byunghun; Hong, Sung-Wan
- 발행일
- 2024-09
- 유형
- Article
- 권
- 71
- 호
- 9
- 페이지
- 11696 ~ 11700