Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing

초록

In-memory computing using two-terminal memristors offers a promising route to reduce the energy demands of data-intensive computing. However, current devices scale poorly due to sneak currents and materials that are incompatible with standard complementary metal-oxide-semiconductor and very large-scale integration processes. Here we demonstrate a self-rectifying memristor that unifies resistive switching and diode-like rectification in a single device, a hybrid ferroelectric-ionic tunnel diode fabricated using complementary metal-oxide-semiconductor compatible materials and processes. We harness the collective (ferroelectric-antiferroelectric polymorphism) and defective (ionic) switching behaviors of HfO2 - ZrO2 to synergistically enhance both its electroresistance and rectifying behavior. Furthermore, conformal atomic layer deposition enables the integration of three-dimensional device structures, yielding high on/off (9.3 & times; 107) and rectifying (1.7 & times; 106) ratios with a storage capacity of 10 Gb. These results highlight the potential of this device as a hardware building block for scalable in-memory computing platforms.

키워드