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K-band watt-level mHEMT power amplifier using quadruple-stacked transistors
- Park, Youngrak;
- Kim, Youngmin;
- Koh, Yumin;
- Kim, Jihoon;
- Seo, Kwangseok;
- ... Jeong, Jinho;
- 외 1명
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0초록
A broadband watt-level power amplifier in a metamorphic high electron mobility transistor (mHEMT) technology is presented at K-band. The quadruple-stacked transistor is used to overcome the low breakdown voltage limit of mHEMTs and achieve watt-level output powers. The fabricated power amplifier using 130-nm mHEMTs shows an output power of 1.3 W at 18 GHz with a 3-dB power bandwidth of 58%. To the best of our knowledge, this is the first report of watt-level single-chip power amplifiers in mHEMT technology. (c) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2624-2626, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27140
키워드
power amplifier; stacked FET; metamorphic high electron mobility transistor; K-band; METAMORPHIC HEMT; LOW-NOISE
- 제목
- K-band watt-level mHEMT power amplifier using quadruple-stacked transistors
- 저자
- Park, Youngrak; Kim, Youngmin; Koh, Yumin; Kim, Jihoon; Seo, Kwangseok; Jeong, Jinho; Kwon, Youngwoo
- 발행일
- 2012-11
- 유형
- Article
- 권
- 54
- 호
- 11
- 페이지
- 2624 ~ 2626